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DDR4 Udimm Udimm Xusuusinta Module Module

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Nooca Bixinta:

L/C,T/T,D/A

Madadaalo:

FOB,CIF,EXW

Min. Dalbo:

1 Piece/Pieces

Gaadiidka:

Ocean,Land,Air,Express

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Sifooyinka Badeecada
Kartida Bixinta & Macluumaad Dheeraad ah
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Overview

Sifooyinka Badeecada

Tusaale ahaan.: NS08GU4E8

Kartida Bixinta & Macluumaad Dheeraad ah

Gaadiidka: Ocean,Land,Air,Express

Nooca Bixinta: L/C,T/T,D/A

Madadaalo: FOB,CIF,EXW

Baakado & Gaarsiin

Iibinta Cutubyada:: Piece/Pieces

8GB 2666Mhhz 288-Pin Dr4 Udimm

Taariikhda dib u eegista

Revision No.	History	Draft Date	Remark
1.0	Initial Release	Apr. 2022

Amarka miiska macluumaadka

Model	Density	Speed	Organization	Component Composition
NS08GU4E8	8GB	2666MHz	1Gx64bit	DDR4 1Gx8 *8

Sifo
Hengstar oo xumaatay DDR4 SDRAM DISMMS (Xaddidan oo Labanlaab Labanlaab ah Syntronous Syntronous Modlules Doutles-ka ee Sinne-Lard ') waa awood hoose oo xawaash ah, oo ah models xawaalad xawaare sare leh oo adeegsanaya DDR4 SDRAS. Ns08gu4e8 waa 1g x 64-bit hal darajo 8GB DDR4-2666 CLB DR19 1.2V SDRAM-ga SPD-ka waxaa loo soo bandhigayaa Jedec Standard Standard DRR4-2666 waqtiga 19-19-19 at 1.2V. 288-Pinm-ka kasta wuxuu adeegsadaa faraha taabashada dahabka. SDRAM-ka SDRAM-ka ee loo yaqaan 'Digm' waxaa loogu talagalay in loo isticmaalo xusuusta ugu weyn markii lagu rakibay nidaamyada sida PC-yada iyo shaqooyinka.

Astaamaha
Biyo-siin: VDD = 1.2V (1.14V ilaa 1.26v)
vddq = 1.2v (1.14v ilaa 1.26v)
vpp - 2.5v (2.375v ilaa 2.75v)
vddspd = 2.25v ilaa 3.6v
Kormeerka 'nominal' iyo qaladka 'Dynamic'
low-Power-ka iskiis dib u habeyn (LPASR)
data baska baska (DBI) ee baska xogta
on-u dhinto Jiilka Vrefdq iyo Qalliinka
on-guddi I2C Horuttet Horutterit (SPD) EEPROM
16 bangiyada gudaha ah; 4 koox oo ah 4 bangi midkiiba
fixed Burst Brost-ka (BC) ee 4 oo dherer ah (BL) ee 8 iyada oo loo marayo diiwaangelinta qaabka loo dejiyey (Mrs)
 jeexan bc4 ama bl8 on-fle-fle-fle-fly (otf)
databus Qor Jeegaga Dib-u-dhiska ee Cllclic (CRC)
teMempperushku wuxuu gacanta ku hayaa (TCR)
cmmland / Cinwaan (ca) parity
Cinwaanka dram-ka ''
8 bit pret-soo-saare
fly-by topology
Commsond / Cinwaanka La-talinta (Cal)
Taliska xakamaynta ee la xakameynayo iyo baska baska
PCCB: Dherer 1.23 "(31.25mm)
gold geeska
roohs waafaqsan oo halogen-bilaash ah

Cabirrada waqtiga muhiimka ah

MT/s	tCK (ns)	CAS Latency (tCK)	tRCD (ns)	tRP (ns)	tRAS (ns)	tRC (ns)	CL-tRCD-tRP
DDR4-2666	0.75	19	14.25	14.25	32	46.25	19-19-19

Miiska cinwaanka

Configuration	Number of bank groups	Bank Group Address	Bank Address	Row Address	Column Address	Page size
8GB(1Rx8)	4	BG0-BG1	BA0-BA1	A0-A15	A0-A9	1 KB

Jaantuska shaqada ee shaqeeya

8GB, 1Gx64 Module (1rank ee X8)

Xusuusin:

1. Qarsoodiga kale ee aan la xusin, qiyamka iska caabbinta waa 15ω ± 5%.

2.zq Nacliinta ayaa ah 240ω ± 1% .fee dhammaan qiyamka kale ee iska caabbinta ah ee loo tixraaco jaantuska fiilooyinka ee ku habboon.

3.ventent_n waxaa ku yaal nashqadeedkan. SPD SPD ayaa sidoo kale loo isticmaali karaa sidoo kale. Looma baahna isbeddelo xiisi ah.

Qiimeynta ugu badan ugu badan

Qiimaha ugu badan ee DC-da

Symbol	Parameter	Rating	Units	NOTE
VDD	Voltage on VDD pin relative to VSS	-0.3 ~ 1.5	V	1,3
VDDQ	Voltage on VDDQ pin relative to VSS	-0.3 ~ 1.5	V	1,3
VPP	Voltage on VPP pin relative to VSS	-0.3 ~ 3.0	V	4
VIN, VOUT	Voltage on any pin except VREFCA relative to VSS	-0.3 ~ 1.5	V	1,3,5
TSTG	Storage Temperature	-55 to +100	°C	1,2

Xusuusin:

1.Wareyaasha ka weyn kuwa ku qoran kuwa ku qoran "qiimeynta ugu badan ee" waxay sababi karaan waxyeelo joogto ah aaladda.

Kani waa qiimeynta walaaca oo keliya iyo hawlgal shaqeynaya oo ah aaladda aaladda kuwaan ama shuruudaha kale ee ka sarreeya kuwa ku tilmaamay qaybaha hawlgalka ee qeexitaankan ee faahfaahintan laguma qori karo. Soo-gaadhista xaaladaha qiimeynta ugu badnaan ee ugu badan ee muddadii la dheereeyey ayaa saameyn ku yeelan kara isku halaynta.

Heerkulka heerkulka ah waa heerkulka dusha sare ee xadka dhexe / dhinaca sare ee Dram. Xaaladaha cabbiraadda, fadlan tixraac heerka Jesd51-2.

3.VDD iyo VDDQ waa inay ahaadaan 300mv oo midba midka kale marwalba; Vreefca waa inaysan ka badnayn 0.6 x VDDQ, marka VDD iyo VDDQ ay ka yar yihiin 500MV; Vrefca waxaa laga yaabaa inay la mid noqoto ama ka yar tahay 300mv.

4.VPPP waa inay la mid noqotaa ama ka weyn tahay VDD / VDDQ marwalba.

5.5 ka dib aagga ka sarreeya 1.5V waxaa lagu cayimay hawlgalka qalabka DDR4 .

Heerkulka Isku-Darka Qaabdhismeedka Qandaraaska

Symbol	Parameter	Rating	Units	Notes
TOPER	Normal Operating Temperature Range	0 to 85	°C	1,2
TOPER	Extended Temperature Range	85 to 95	°C	1,3

Ogeysiis:

1. Ka-tagga kuleylka heerkulka ah waa heerkulka dusha sare ee dusha sare ee xarunta / dhinaca sare ee Hordhaca. Xaaladaha cabirka, fadlan tixraac Dukumintiga Jedec Jesd51-2.

2. Heerkulka heerkulka caadiga ah wuxuu sheegayaa heerkulka ay dhammaan tixgalka oo dhan la taageeri doono. Inta lagu gudajiro hawlgalka, heerkulka kiiska Dram waa in la ilaaliyaa inta u dhaxaysa 0 - 85 ° C hoostiisa xaaladaha hawlgalka.

3. Codsiyada 3.Some waxay u baahan tahay hawlgal ka ah Heerkulka Fram ee heerkulka dheeriga ah ee u dhexeeya 85 ° C iyo 95 ° C heerkulka. Faahfaahin buuxa ayaa loo dammaanad qaadayaa xaddigan, laakiin shuruudaha dheeriga ah ee soosocda ayaa quseeya:

a). Amarada qaboobaha waa in la labanlaabmayaa inta jeer ee labanlaabmayo, sidaa darteedna yareynta muddada dib-u-habeynta trefiga trefiga trefi illaa 3.9 μs. Waxaa kale oo suuragal ah in lagu caddeeyo qayb leh 1x dib u cusbooneysiin (trefi ilaa 7.8s) oo ku jira tirada heerkulka ee heerkulka ah. Fadlan tixraac UPM SPD si aad u hesho xulashada ikhtiyaarka.

b). Haddii hawlgalka is-qaboojiyaha loo baahan yahay ee heerkulka dheeraadka ah, markaa waa qasab in la isticmaalo qaabka is-dayactirka gacanta ee heerkulka is-fidsan (MR2) = 0B iyo MR2 A7 = 1B) ama u suurto geliya is-aqbalaadda ikhtiyaariga ah Qaabka (MR2 A6 = 1B iyo MR2 A7 = 0B).

Xaaladaha AC & DC

Xaaladaha DC ee lagu taliyay

Symbol	Parameter	Rating			Unit	NOTE
Symbol	Parameter	Min.	Typ.	Max.	Unit	NOTE
VDD	Supply Voltage	1.14	1.2	1.26	V	1,2,3
VDDQ	Supply Voltage for Output	1.14	1.2	1.26	V	1,2,3
VPP	Supply Voltage for DRAM Activating	2.375	2.5	2.75	V	3