Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeAlaabtaQalabka loo yaqaan 'wers smart'DDR3 Udimm Xusuusta Xusuusin xusuusta

DDR3 Udimm Xusuusta Xusuusin xusuusta

Nooca Bixinta:
L/C,T/T,D/A
Madadaalo:
FOB,EXW,CIF
Min. Dalbo:
1 Piece/Pieces
Gaadiidka:
Ocean,Air,Express,Land
  • Tafaasiisha Sheyga
Overview
Sifooyinka Badeecada

Tusaale ahaan.NSO4GU3AB

Kartida Bixinta & Macluumaad Dheeraad ah

GaadiidkaOcean,Air,Express,Land

Nooca BixintaL/C,T/T,D/A

MadadaaloFOB,EXW,CIF

Baakado & Gaarsiin
Iibinta Cutubyada:
Piece/Pieces

4GB 1600mhz 240-Pin dr3 udimm


Taariikhda dib u eegista

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Amarka miiska macluumaadka

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Sifo
Hengstar oo xumaatay DDR3 SDRAM SHRIMS (Xaddidal Labanlaab oo Labanlaab ah Ns04gu3b waa 512m x 64-bit laba darajo 4GB DDR3-1600 CLBB DR11 1.5v SDRAM-ka SPD waxaa loo soo bandhigayaa Jedec Standard Standards DRR3-1600 Waqtiga 11-11-11 At 1.5V. 240-pin-pin-ka kasta wuxuu adeegsadaa faraha taabashada dahabka. SDRAM-ka SDRAM-ka ee loo yaqaan 'Digm' waxaa loogu talagalay in loo isticmaalo xusuusta ugu weyn markii lagu rakibay nidaamyada sida PC-yada iyo shaqooyinka.


Astaamaha
Bixi: VDD = 1.5V (1.425v illaa 1.575v)
vddq = 1.5v (1.425v illaa 1.575v)
800mhz FCK oo loogu talagalay 1600MB / seker / PIN
8 Bank gudaha ah oo madaxbanaan
romareraftabled CASTIS: 11, 10, 9, 8, 7, 6
Daahitaanka isku darka ah ee 'Lightiff': 0, CL - 2, ama CL - 1 saac
8-bit pre-pretch
Dhererka 'burst dherer'
bi-TONTAL ISTICMAALO XUQUUQDA
Dib u habeynta (iskiis) hagaajinta; Qiyaasta is-dhexgalka gudaha iyada oo loo marayo ZQ PIN (RZQ: 240 ohm ± 1%)
on u dhinta joojinta iyadoo la adeegsanayo ODT PIN PIN
average waqti ka fogaan 7.8us ka hooseeya tjarka 85 ° C, 3.90 ° C <95 ° C <95 ° C
ynchronous Reset
Dib-u-soo-nooleynta-soo-saarka
fly-by topology
PCCB: Dherer 1.18 "(30mm)
roohs waafaqsan oo halogen-bilaash ah


Cabirrada waqtiga muhiimka ah

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Miiska cinwaanka

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Sharaxaada PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Qoraallada : Shaxda sharraxa PIN-ka ee hoose waa liis dhameystiran oo ku saabsan dhammaan biinanka suurtagalka ah ee dhammaan cutubyada DDR3. Dhamaan biinanka ku taxan May Lama taageerin cutubkan. Ka eeg meeleynta PIN si aad u hesho macluumaadka gaarka ah ee cutubkan.


Jaantuska shaqada ee shaqeeya

4GB, 512mx64 module (2rank of x8)

1


2


Xusuusin:
1.Dha kubbadda zQ-ka ee ka mid ah 'zQ' Waxaa loo isticmaalaa dhajinta qaybta-dhinta-dhiminta iyo darawalka wax soo saarka.



Cabirrada module


Aragtida hore

3

Aragtida hore

4

Ogeysiis:
1.Qaar cabirku waxay ku jiraan milimitir (inji); Max / Min ama Mine (Tirti) halka lagu xusay.
2.Toleler oo ku saabsan dhammaan cabirrada ± 0.15mm haddii aan si kale loo cayimin mooyee.
3. Jaantuska cabbirka ayaa loo tixraacayaa tixraac oo keliya.

Qaybaha alaabta : Qalabka loo yaqaan 'wers smart'

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